离子轰击 MgO 薄膜二次电子发射的研究

摘要

氧化镁因其二次电子发射系数高、抗溅射能力强等优异的性能，广泛应用于平板显示器等电子器件中，其二次电子发射性能有重要的研究价值。介绍了离子轰击下氧化镁薄膜发射的二次电子的典型测量装置及相关研究结论，总结了离子轰击下氧化镁薄膜二次电子的发射特性，同时对离子轰击的材料产生的二次电子发射的研究提出了建议。脉冲中和法比较适用于离子轰击下的氧化镁薄膜的二次电子发射的测量；不同晶面的MgO薄膜的二次电子发射系数不同，（111）晶面最高；低能离子入射情况下，二次电子的能量分布与离子类型无关。%MgO thin film is widely used as the protective layer in Plasma Display Panel and some other electronic devices be-cause it has good characteristics of secondary electron emission and great tolerance for ion bombardment.In this article,we re-viewed main research of the methods measuring the secondary electron emission coefficient in MgO thin film.Basic properties of ion-induced secondary electron emission were also mentioned .Some advices for studying the secondary electron emission induced by ion were proposed.According to the analysis, plused neutralization methods are preferable to measuring the sec-ondary electron emission coefficient in MgO films.Significant variations in secondary electron yield have been observed for different crystal faces of MgO, with MgO(111) giving the highest yield.The studies also reveales that the measured electron energy distributions is independent of ion type when low energy ion incoming.