A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

摘要

The distribution of Schottky barrier heights over the contact area in Au/III-V semiconductor (GaAs, InP Al_xGa_(1-x)As, In_xGa_(1-x)As) diodes was determined using ballistic electron emission microscopy. Samples which received a chemical pretreatment in aqueous HF or HCl solutions showed changes in the barrier height distribution. In some cases, short rinses in deionized water could remove these effects. Additional XPS measurements and our former work on Si enabled us to propose a model wherein negatively charged species containing F or Cl at the interface are assumed to be responsible for these changes in barrier height distribution. However, in some cases, these effects were shadowed by more drastic influences due to the chemical processing such as changes in the stoichiometry of the surface region.