Semiconductor laser formed as coupled quantum films including three semiconductor layers and a barrier layer useful for light emission in the MWIR or LWIR regions and for contact-free chemical study of gas traces

摘要

Semiconductor laser with a number of periodic recurring series (sic), formed as coupled quantum films, optically active layer regions with at least three semiconducting layers, the first and second of which show a reciprocal conductivity band energy level, and have at least a third semiconductor layer having a discrete, quantized hole-energy state, with n-1 barrier layers of specific thickness for spatial separation of two adjacent optically active layer regions.