Electrical properties of molecular beam epitaxially grown Al_xGa_1-xGa_1-xSb_yAs_1-x and its application in inP-based high electron mobility transistors

摘要

We have investigate the use of lattice-matched Al_xGa_1-xSbAs quaternary alloys in InP-based microelectronic devices. The band alignment for Al_xGa_1-xSbAs/InGaAs is calculated across the entire compositional range of x using van de walle and Martin's model solid theory, and the theoretical predictions agree with previously published values within 0.1-0.3 eV. Temperature-dependent current-voltage measurements are carried out on Au/Cr/Al_xGa_1-xSbAs Schottky diodes grown by molecular beam epitaxy.