Effect of implantation energy on the microstructure evolution of low dose separation of implanted oxygen wafers

摘要

The structure development of buried oxide in low-dose separation of implanted oxygen wafers implanted at acceleration energies of 160, 130, and 100 keV was investigated by cross-section and high resolution transmission electron microscopy. The threading dislocation density in the superficial silicon layer was determined by Secco etching. The results indicate that the thickness of superficial silicon, the buried oxide (BOX) integrity, effective BOT thickness, Si/SiO_2 interface, and threading dislocation density have a strong energy dependence.