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Microstructure of High Dose Oxygen Implanted Si and Its Dependence on Implantation Conditions

机译:高剂量氧注入硅的微观结构及其对注入条件的依赖性

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The formation of a buried dielectric in single crystals of silicon by high dose implantation of oxygen ions is investigated. The dependence of the microstructure on implantation conditions is determined. It will be shown that the microstructure can be tailored by changing the implant conditions to optimize its suitability for the silicon-on-insulator technology. Mechanisms responsible for the formation of the microstructure and the influence of implantation conditions are discussed. (ERA citation 10:042495)

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