首页> 外文期刊>Journal of multiple-valued logic and soft computing >Logic-in-Memory VLSI circuit for Fully Parallel Nearest Pattern Matching Based on Floating-Gate-MOS Pass-Transistor Logic
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Logic-in-Memory VLSI circuit for Fully Parallel Nearest Pattern Matching Based on Floating-Gate-MOS Pass-Transistor Logic

机译:基于浮栅MOS传输晶体管逻辑的完全并行最近图形匹配的存储逻辑VLSI电路

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摘要

A logic-in-memory VLSI circuit based on floating-gate-MOS pass-transistor logic is proposed for fully parallel nearest pattern-matching operations between a 32-bit input word and 32-bit stored reference words. The similarity between words is measured by the Manhattan distance. A 32-bit adder based on the radix-2 signed-digit number system is implemented as a floating-gate-MOS pass-transistor network, where a 32-bit reference data is stored as the threshold voltages of floating-gate MOS transistors. As a result, a fully parallel memory-data access without communication bottleneck is realized in the proposed pass-transistor network. The chip area and the power dissipation of the proposed logic-in-memory VLSI circuit are greatly reduced in comparison with those of a corresponding binary CMOS implementation while yielding almost the same switching delay.
机译:针对32位输入字和32位存储参考字之间的完全并行最近模式匹配操作,提出了一种基于浮栅MOS传输晶体管逻辑的内存中逻辑VLSI电路。单词之间的相似性通过曼哈顿距离来衡量。将基于基数2的带符号数字系统的32位加法器实现为浮栅MOS传输晶体管网络,其中将32位参考数据存储为浮栅MOS晶体管的阈值电压。结果,在提出的传输晶体管网络中实现了没有通信瓶颈的完全并行的存储器数据访问。与相应的二进制CMOS实施方案相比,所提议的存储器中逻辑VLSI电路的芯片面积和功耗大大降低,同时产生了几乎相同的开关延迟。

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