Effect of sputtering power on microstructure of dielectric ceramic thin films by RF magnetron sputtering method using (Ba_(0.3)Sr_(0.7))(Zn_(1/3)3Nb_(2/3))O_3 as target

摘要

Radio frequency (RF) magnetron sputtering method was applied to prepare dielectric ceramic thin films on SiO_2 (110) substrates using (Ba_(0.3)Sr_(0.7))(Zn_(1/3)Nb_(2/3))O_3 microwave dielectric ceramics as target. The samples were deposited at different sputtering powers in Ar atmosphere. In particular, the microstructure and morphology of the thin films were investigated as a function of sputtering powers by X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results show that the thin films are polycrystalline and the sputtering power significantly influences the surface morphology and microstructure of the thin films. On increasing the sputtering power, the crystallinity improves and the grain size and roughness of the thin films reach maximum values at 200 W.