High-κ NdTaO_4 dielectrics deposited on polycrystalline silicon substrates

摘要

High-k NdTaO_4 dielectrics annealed with various temperatures were first deposited on polycrystalline silicon substrates. Material and electrical characterizations were performed. To examine the crystalline structures, X-ray diffraction patterns were analyzed. Electrical measurements including current-voltage characteristics, constant current stress, and the Weibull plots show that annealing could enhance the breakdown voltages, lower the trapping rate, and strengthen the reliability. Results indicate that annealing at 900 ℃ may optimize the dielectric performance. This dielectric shows promise for future gate material or flash memory integrated with current NdTaO_4-based optical devices.