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首页> 外文期刊>Journal of materials science >The effect of Cu substrate texture on the intermetallic compounds (IMCs) growth at a Sn3.5Ag-Cu interface
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The effect of Cu substrate texture on the intermetallic compounds (IMCs) growth at a Sn3.5Ag-Cu interface

机译:铜基底质地对Sn3.5Ag-Cu界面金属间化合物(IMC)生长的影响

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摘要

The effect of Cu substrates texture on morphology and growth behavior of intermetallic compounds (IMCs) during reflowing and aging time were systematically investigated. The IMCs formed at Sn3.5Ag/(220) Cu and Sn3.5Ag/(200) Cu interface showed significant difference. After reflowing, the Cu_6Sn_5 grains in the both couples are all rounded, but more protruded and thinner at Sn3.5Ag/(200) Cu interface due to lower IMC/solder interfacial energy and smaller quantity of dissolution Cu atoms for (200) Cu substrate. At aging process, for IMCs formed on two different textured substrates, the Cu_6Sn_5 and Cu_3Sn exhibited reciprocal inhibition within 48 h, and the whole thickness of IMCs (Cu_6Sn_5+Cu_3Sn) increases with aging time prolonged, proportional to the square root of aging time. The whole IMCs at Sn3.5Ag/(220) Cu interface is thicker than that at Sn3.5Ag/(200) Cu interface, with a reaction constant of 1.849 × 10~(-17) and 5.39 × 10~(-18) m~2/s for IMCs growth respectively.
机译:系统地研究了铜基体织构对回流和时效过程中金属间化合物(IMC)的形态和生长行为的影响。在Sn3.5Ag /(220)Cu和Sn3.5Ag /(200)Cu界面形成的IMC表现出显着差异。回流后,两对中的Cu_6Sn_5晶粒都变圆了,但是由于较低的IMC /焊料界面能和(200)Cu衬底的溶解Cu原子数量较少,Sn3.5Ag /(200)Cu界面处的突起更加突出且更薄。 。在时效过程中,对于在两种不同的纹理化衬底上形成的IMC,Cu_6Sn_5和Cu_3Sn在48 h内表现出相互抑制作用,且IMC的整体厚度(Cu_6Sn_5 + Cu_3Sn)随着时效时间的延长而增加,与时效时间的平方根成比例。 Sn3.5Ag /(220)Cu界面上的整个IMC比Sn3.5Ag /(200)Cu界面上的整个IMC厚,反应常数为1.849×10〜(-17)和5.39×10〜(-18) IMC的增长分别为m〜2 / s。

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  • 来源
    《Journal of materials science 》 |2016年第4期| 3854-3859| 共6页
  • 作者单位

    State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China;

    State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China;

    Semiconductor Packaging Development, Samsung Electronics, Suwon, Korea;

    State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China;

    State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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