首页> 外文学位 >Polarity effect of electromigration on intermetallic compound (IMC) formation in lead-free solder V-groove samples.
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Polarity effect of electromigration on intermetallic compound (IMC) formation in lead-free solder V-groove samples.

机译:电迁移对无铅焊料V型槽样品中金属间化合物(IMC)形成的极性影响。

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摘要

With the trend of further miniaturization of very-large-scale-integration (VLSI) of circuits, electromigration becomes a reliability concern in solder alloys. The polarity effect of electromigration on intermetallic compound (IMC) formation at the anode and the cathode in solder V-groove samples has been investigated.; The V-groove solder line samples, with width of about 100 mum and length of 500--700 mum, were used to study the change in thickness and morphology of interfacial IMC at anode and cathode in the SnAg 3.8Cu0.7/Cu system under different current density and temperature settings. The current densities were in the range of 103 to 104A/ cm2 and the temperature settings were 120° C, 150°C and 180°C. The samples were formed by flowing molten lead-free solder SnAg 3.8Cu0.7 into V-grooves etched on (001) silicon wafers, and two copper wires were used as electrodes.; We observed that IMC transformed from initial scallop-type into layer-type morphology with or without applying current. Due to the polarity of electric current and the local current crowding, IMC transformed from scallop-type into layer-type morphology differently from cathode to anode. We also found that the same IMCs of Cu6Sn 5 and Cu3Sn formed at solder/Cu interfaces with or without the passage of electric current. The growth of IMC has been enhanced by electric current at the anode and inhibited at the cathode, comparing with samples without applying current. A kinetic theory is derived, based on the Cu mass flux transport in the sample, to model the growth rate of IMC at anode and cathode.
机译:随着电路的超大规模集成(VLSI)进一步小型化的趋势,电迁移成为焊料合金中可靠性的关注点。研究了电迁移的极性对焊料V型槽样品中阳极和阴极上金属间化合物(IMC)形成的影响。使用宽约100毫米,长500--700微米的V槽焊锡线样品研究SnAg 3.8Cu0.7 / Cu系统中阳极和阴极界面IMC的厚度和形态变化在不同的电流密度和温度设置下。电流密度在103至104A / cm 2的范围内,并且温度设定为120℃,150℃和180℃。通过使熔融的无铅焊料SnAg 3.8Cu0.7流入蚀刻在(001)硅片上的V型槽中来形成样品,并使用两条铜线作为电极。我们观察到,在施加或不施加电流的情况下,IMC从最初的扇贝形转变为层形形态。由于电流的极性和局部电流的拥挤,IMC从扇贝形转变为层形形态,而阴极到阳极的形态有所不同。我们还发现,在有或没有电流通过的情况下,在焊料/ Cu界面处形成的相同的Cu6Sn 5和Cu3Sn IMC。与不施加电流的样品相比,IMC的生长已通过阳极处的电流增强而在阴极处受到抑制。基于样品中铜的质量通量传输,得出了动力学理论,以模拟IMC在阳极和阴极的生长速率。

著录项

  • 作者

    Gan, Hua.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Engineering Materials Science.; Engineering Packaging.; Engineering Metallurgy.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 92 p.
  • 总页数 92
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;包装工程;冶金工业;
  • 关键词

  • 入库时间 2022-08-17 11:43:56

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