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首页> 外文期刊>Journal of materials science >Electrodeposition of copper-doped SnS thin films and their electric transmission properties control for thermoelectric enhancement
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Electrodeposition of copper-doped SnS thin films and their electric transmission properties control for thermoelectric enhancement

机译:铜掺杂SnS薄膜的电沉积及其电传输特性控制,以增强热电性能

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摘要

The thermoelectric performances of SnS are gradually noticed because of its structure similarity to SnSe which has the highest known thermoelectric performance. But the low electric transmission properties of SnS confines its thermoelectric performances. In this paper, we prepared Cu-doped SnS thin films with electrodeposition method. The Cu-doping content of the thin films were controlled by the adjustment of the electrolyte composition. The Cu doping narrowed the band gap of the SnS thin films, so that it promoted the carrier concentration of the films. The largest carrier concentration increased from 4.26 x 10(15) to 436.42 x 10(15) cm(-3) after the Cu doping. By the additives in the electrolyte, the texture orientation and its coefficient were successfully controlled. The texture of (040) and (200) were obtained by the addition of urea and CTAB, respectively. The carrier mobility of the Cu-doped SnS thin films increased from 0.63 to 1.94 cm(2)/V s by the (200) texture. With a sample electrodeposition method, we successfully accomplished the combination of the Cu-doping and texture control of SnS thin films. Such a combination decreased the resistivity of the Cu-doped thin film with (200) texture from 322.53 to 24.50 omega cm, so it was an effective path to improve the electric transmission performance of SnS thin films. Our results provide an easy method and a new view to improve the electric transmission performance of thermoelectric thin films.
机译:SnS的热电性能逐渐被人们注意到,因为它与具有最高已知热电性能的SnSe的结构相似。但是SnS的低电传输特性限制了其热电性能。本文采用电沉积法制备了掺杂Cu的SnS薄膜。通过调节电解质组成来控制薄膜的Cu掺杂含量。 Cu掺杂使SnS薄膜的带隙变窄,从而提高了薄膜的载流子浓度。 Cu掺杂后,最大载流子浓度从4.26 x 10(15)增加到436.42 x 10(15)cm(-3)。通过电解质中的添加剂,成功地控制了织构取向及其系数。通过分别添加尿素和CTAB获得(040)和(200)的质地。通过(200)织构,掺杂Cu的SnS薄膜的载流子迁移率从0.63增至1.94 cm(2)/ V s。通过样品电沉积方法,我们成功地完成了Cu掺杂和SnS薄膜的质构控制的结合。这种组合将具有(200)织构的掺杂Cu的薄膜的电阻率从322.53降低到24.50Ωcm,因此这是改善SnS薄膜的电传输性能的有效途径。我们的结果为改善热电薄膜的电传输性能提供了一种简便的方法和新的见解。

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