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Structurally-driven Enhancement of Thermoelectric Properties within Poly(34-ethylenedioxythiophene) thin Films

机译:聚(34-乙烯二氧噻吩)薄膜中结构驱动的热电性能增强

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摘要

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT:Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT:Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK2 has been readily obtained for PEDOT:Tos thin films following this methodology.
机译:由于对清洁能源的需求不断增长,热电已成为减少对化石燃料依赖的潜在替代品。具体而言,基于聚合物的热电设备可以为近室温的能量收集器提供一条有效的途径。因此,控制导电聚合物的热电性能至关重要,在这里,研究了掺杂有对甲苯磺酸盐(Tos)分子的聚(3,4-乙撑二氧噻吩)(PEDOT)薄膜的结构,电学和热电性能。薄膜加工。 PEDOT:Tos薄膜是通过在对甲苯磺酸铁(III)和不同的助溶剂存在下,通过(3,4-乙撑二氧噻吩)单体的原位聚合制备的,从而调节薄膜结构。当塞贝克系数保持恒定时,对于用高沸点添加剂处理的薄膜,观察到电导率有很大改善。发现电导率的增加完全是平面内迁移率驱动的。通过掠入射广角X射线散射探测薄膜结构已表明,这种行为是由PEDOT:Tos薄膜的结构特性决定的;这是由PEDOT:Tos薄膜的结构特性决定的。特别是薄膜的结晶度与PEDOT微晶的优先边沿取向相结合。按照这种方法,已经很容易将PEDOT:Tos薄膜的功率因数从25提高到78.5μW/ mK 2

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