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首页> 外文期刊>Organic Electronics >Enhanced thermoelectric properties of poly(3,4-ethylenedioxythiophene) thin films treated with H_2SO_4
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Enhanced thermoelectric properties of poly(3,4-ethylenedioxythiophene) thin films treated with H_2SO_4

机译:H_2SO_4处理的聚(3,4-乙撑二氧噻吩)薄膜的增强热电性能

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摘要

Poly(3,4-ethylenedioxythiophene)-tosylate-polyethylene glycol-polypropylene glycol-polyethylene glycol (PEDOT-Tos-PPP) films were prepared via a vapor phase polymerization (VPP) method. The thermoelectric (TE) properties of the films before and after treated with H_2SO_4 at different concentrations were measured at 295 K. The TE properties of the films have been significantly improved by the H_2SO_4 treatment. For example, after treated with H_2SO_4 at 1 M, the electrical conductivity of the film has increased remarkably from 944 to 1750 S cm~(-1), the Seebeck coefficient of the film reduced slightly from 16.5 to 14.6 μV K~(-1), and the thermal conductivity decreased from 0.495 to 0.474 W/mK. Hence, the ZT value at 295 K has increased from 0.016 to 0.024. The electrical conductivity (Seebeck coefficient) of the untreated and 1 M H_2SO_4 treated PEDOT-Tos-PPP films decreases (increases) with increasing temperature from 295 to 375 K. And the power factor of the films monotonically increases with temperature. The power factor at 375 K of the 1 M H_2SO_4 treated film is almost twice as high as that at 295 K. Atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS) analyses, and the thickness measurement of the films indicate that the tri-block copolymer PPP have been removed from the PEDOT-Tos-PPP films after the H_2SO_4 treatment, and the UV-Vis-NIR absorption spectroscopy and Raman spectroscopy analyses reveal an increasing in the doping level in the PEDOT chains after the H_2SO_4 treatment. Therefore, the TE properties enhancement may be attributed to the combined effects of the removal of the insulating PPP from the PEDOT-Tos-PPP film, increase the doping level and conformational change of the PEDOT chains resulted from the H_2SO_4 treatment.
机译:通过气相聚合(VPP)方法制备了聚(3,4-乙撑二氧噻吩)-甲苯磺酸酯-聚乙二醇-聚丙二醇-聚乙二醇(PEDOT-Tos-PPP)薄膜。在295 K下测量了在不同浓度的H_2SO_4处理前后的薄膜的热电(TE)性能。通过H_2SO_4处理,薄膜的TE性能得到了显着改善。例如,在1 M下用H_2SO_4处理后,薄膜的电导率从944显着增加到1750 S cm〜(-1),薄膜的塞贝克系数从16.5μVK〜(-1)略有降低。 ),热导率从0.495降至0.474 W / mK。因此,在295 K时的ZT值已从0.016增加到0.024。未经处理和1 M H_2SO_4处理的PEDOT-Tos-PPP薄膜的电导率(塞贝克系数)随着温度从295 K升高到375 K而降低(增加)。薄膜的功率因数随温度单调增加。经1 M H_2SO_4处理的薄膜在375 K时的功率因数几乎是在295 K时的功率因数的两倍。原子力显微镜(AFM)和X射线光电子能谱(XPS)分析表明,薄膜的厚度测量表明: H_2SO_4处理后,三嵌段共聚物PPP已从PEDOT-Tos-PPP膜中去除,UV-Vis-NIR吸收光谱和拉曼光谱分析表明,H_2SO_4处理后PEDOT链中的掺杂水平增加。因此,TE性质的增强可以归因于以下两种组合效应:从PEDOT-Tos-PPP膜中去除绝缘的PPP,增加掺杂水平以及由H_2SO_4处理导致的PEDOT链的构象变化。

著录项

  • 来源
    《Organic Electronics》 |2014年第11期|3087-3095|共9页
  • 作者单位

    Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China;

    Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China;

    CMSE, CSIRO, 37 Graham Road, Highett, VIC 3190, Australia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thermoelectric properties; Vapor-phase polymerization; Poly(3,4-ethylenedioxythiophene); Film;

    机译:热电性能;气相聚合;聚(3,4-乙撑二氧噻吩);电影;

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