FORMATION METHOD OF A GAPLESS SEMICONDUCTOR THIN FILM, CAPABLE OF FORMING A PBPDO2 THIN FILM HAVING A SUPERIOR THERMOELECTRICITY PROPERTY

摘要

PURPOSE: A formation method is provided to control the composition ratio of PbO by forming a PbPdO2 thin film in a vacuum container at oxygen atmosphere.;CONSTITUTION: A lead palladium oxide target is prepared(S100). The lead oxide powder is prepared. The palladium oxide powder is prepared. The lead oxide powder and the palladium oxide powder are mixed and are sintered. The lead palladium oxide target is installed in the vacuum container and a substrate is provided(S200). The lead palladium oxide thin film is formed on the substrate by using the lead palladium oxide target(S300).;COPYRIGHT KIPO 2011