Investigation of Sb_(65)Se_(35)/Sb multilayer thin films for high speed and high thermal stability application in phase change memory

摘要

Sb~(65)Se~(35)/Sb multilayer composite thin films were prepared by depositing the Sb~(65)Se~(35)and Sb layers alternately. In situ resistance vs. temperature was measured and the crystallization temperature increased with thickening the Sb~(65)Se~(35)layer in Sb~(65)Se~(35)/Sb thin films. The data retention temperature of 10 years increased greatly from 14 °C of pure Sb to 103 °C of [Sb~(65)Se~(35)(3 nm)/Sb(7 nm)]~(3). Also, the band gap was broadened and the surface became smoother. X-ray diffraction patterns for the studied materials revealed that Sb and Sb~(2)Se~(3)phases coexisted in Sb~(65)Se~(35)/Sb thin films. Absorbing the advantages of the fast phase change for Sb, the [Sb~(65)Se~(35)(1 nm)/Sb(9 nm)]~(5)multilayer thin film had an ultrafast amorphization speed of 1.6 ns. The results indicated that Sb~(65)Se~(35)/Sb multilayer thin film was a potential phase change material for fast speed and good stability.