机译:超晶格状Sb_(50)Se_(50)/ Ga_(30)Sb_(70)薄膜,用于高速和高密度相变存储应用
Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China,School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China;
Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China;
State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics,Sun Yat-Sen University, Guangzhou 510275, China;
State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics,Sun Yat-Sen University, Guangzhou 510275, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China;
机译:相变存储应用中超晶格状Ge / Sb_(70)Se_(30)薄膜的高速和低功耗
机译:具有超高速和低功耗的超晶格状Ga_(40)Sb_(60)/ Sb薄膜,用于相变存储应用
机译:用于相变存储器应用的Mg_(35)Sb_(65)Sb_(65)/ sn_(15)Sb_(85)超晶格状膜的结晶研究
机译:用于高速和高热稳定性相变存储应用的N掺杂Sn_(15)Sb_(85)薄膜
机译:硫族化物薄膜器件中的电结构耦合:光伏和相变存储器
机译:纳秒紫外光脉冲诱导的Ge2Sb2Te5相变存储薄膜的结构转变
机译:电子和光学性质的混合密度泛函研究 相变存储材料:$ \ mathrm {Ge_ {2} sb_ {2} Te_ {5}} $