GESB-BASED PHASE-CHANGE RECORDING FILM EXCELLENT IN STORAGE STABILITY OF RECORDING MARK AND SPATTERING TARGET FOR FORMING THE GESB-BASED PHASE-CHANGE RECORDING FILM

摘要

PROBLEM TO BE SOLVED: To provide a GeSb-based phase-change recording film excellent in storage stability of a recording mark used in various phase-change recording media such as a CD and a DVD and a spattering target forming the GeSb-based phase-change recording film.;SOLUTION: The GeSb-based phase-change recording film excellent in the storage stability of the recording mark having composition in which 3-14% of Ge, 1-10% of In, 1-10% or Bi and 1-10% of Ga in atomic% are contained and the remaining parts consist of Sb and inevitable impurity and the spattering target having the same component composition as that of the GeSb-based phase-change recording film are constituted.;COPYRIGHT: (C)2008,JPO&INPIT