Chemical-vapor-deposition growth and characterization of epitaxial 3C-SiC films on SOI substrates with thin silicon top layers

摘要

Epitaxial 3C-SiC films were grown by chemical vapor deposition on the silicon-on-insulator (SOI) substrates with 20-75-nm-thick Si top layers. A relatively low growth temperature of 1150deg.C and a reduced hydrogen flow rate of 1 1pm during the precarbonization process was necessary to preserve the SOI structure and thereby obtain high-quality SiC films The transmission electron microscopy observation of the SiC/SOI structures revealed high density of misfit dislocations in the SiC film, but no Dislocation within the top Si layer.