Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

摘要

Single photon sources (SPS) are an important building block for realizing quantum technologies for computing, communication, and sensing. For industrialization, electrically controllable color centers acting as SPS are required. We have demonstrated the creation of electrically controllable silicon vacancies (V(Si)s) in the SiC pn junction diode fabricated by proton beam writing (PBW). PBW was successfully used to introduce electrically controllable V-Si without degradation of the diode performance. The dependence of the electroluminescence (EL) and photoluminescence (PL) intensities from V-Si on H+ fluence revealed that the emission efficiency of EL is less than that of PL. For EL, the supply of carriers (electrons and/or holes) was restricted due to the resistive region around each V-Si introduced by PBW. The results suggest that further improvement in the V-Si creation process without defects acting as majority carrier removal centers (highly resistive region) and nonradiative centers by optimization of PBW conditions are key points to realize highly sensitive quantum sensors using V-Si.