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Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing

机译:通过质子辐照和退火控制在4H-SiC中生成固有的近红外色中心

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摘要

We report on the generation and annihilation of color centers in 4H silicon carbide (SiC) by proton irradiation and subsequent annealing. Using low-temperature photoluminescence (PL), we study the transformation of PL spectra for different proton doses and annealing temperatures. Among well reported defect signatures, we observe omnipresent but not yet identified PL signatures consisting of three sharp and temperature stable lines (denoted TS1,2,3) at 768.8 nm, 812.0 nm, and 813.3 nm. These lines show a strong correlation throughout all measurement parameters, suggesting that they belong to the same microscopic defect. Further, a clear dependence of the TS1,2,3 line intensities on the initial implantation dose is observed after annealing, indicating that the underlying defect is related to implantation induced intrinsic defects. The overall data suggest a sequential defect transformation: proton irradiation initially generates isolated silicon vacancies which are transformed into antisite vacancy complexes which are, in turn, transformed into presumably intrinsic-related defects, showing up as TS1,2,3 PL lines. We present recipes for the controlled generation of these color centers. Published by AIP Publishing.
机译:我们通过质子辐照和随后的退火报告了4H碳化硅(SiC)中色心的产生和an灭。使用低温光致发光(PL),我们研究了不同质子剂量和退火温度下PL光谱的转变。在报告充分的缺陷特征中,我们观察到了无处不在但尚未鉴定出的PL特征,它们由在768.8 nm,812.0 nm和813.3 nm处的三条尖锐且温度稳定的线(表示为TS1,2,3)组成。这些线在所有测量参数中都显示出很强的相关性,表明它们属于同一微观缺陷。此外,退火后观察到TS1,2,3线强度与初始注入剂量有明显的相关性,这表明潜在的缺陷与注入引起的固有缺陷有关。总体数据表明,相继发生了缺陷转变:质子辐照最初会产生孤立的硅空位,这些空位会转变为反位空位复合物,然后反过来转变为可能与本征有关的缺陷,显示为TS1,2,3 PL线。我们提出了这些颜色中心的受控生成方法。由AIP Publishing发布。

著录项

  • 来源
    《Applied Physics Letters》 |2018年第12期|122102.1-122102.4|共4页
  • 作者单位

    FAU Erlangen Nurnberg, Dept Phys, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany;

    FAU Erlangen Nurnberg, Dept Phys, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany;

    FAU Erlangen Nurnberg, Dept Phys, Inst Opt Informat & Photon, D-91058 Erlangen, Germany;

    FAU Erlangen Nurnberg, Dept Phys, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany;

    FAU Erlangen Nurnberg, Dept Phys, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 03:13:56

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