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Discussion of strong pinning effect via nonuniform PSSW mode in Fe/NiFe/ Fe multi-layer films with different Fe film thicknesses

机译:不同Fe膜厚度的Fe / NiFe / Fe多层膜中通过非均匀PSSW模式的强循环效果探讨

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摘要

Multilayer films with high saturation magnetization and low ferromagnetic resonance linewidth have great potential for various applications in the era of high frequency and miniaturization. In this study, Fe (t nm)/Ni_(81)Fe_(19) (50 nm)/Fe (t nm) multilayer films were fabricated using electron beam evaporation, and the microstructure, saturation magnetization, coercivity, ferromagnetic resonance (FMR) linewidth and perpendicular standing spin-wave (PSSW) mode are discussed in detail. With increasing Fe film thickness, the saturation magnetization of the multilayer films increased from 10,547 to 14,494 Gs, becoming closer to the theoretical value, and the ferromagnetic resonance linewidth showed an overall increasing trend. It is worth noting that a strong pinning effect has been found via the appearance of the PSSW mode in the FMR spectrum, when the thickness of Fe reaches 4 nm. As the thickness of the Fe film increased from 4 to 15 nm, the perpendicular standing spin-wave field (H_p) increased from 133 to 379 Oe, and the perpendicular standing spin-wave linewidth (ΔH_P) increased from 68 to 148 Oe. Remarkably, with 8 nm thick Fe film, the multilayer films achieved excellent comprehensive performances with high saturation magnetization (4πM_s, 13,525 Gs), a low in-plane ferromagnetic resonance field (H_r, 725 Oe), and a low FMR linewidth (ΔH, 84.24 Oe).
机译:具有高饱和磁化的多层薄膜和低铁磁共振线宽对于高频和小型化时代的各种应用具有很大的潜力。在该研究中,使用电子束蒸发制造Fe(T nm)/ Ni_(81)Fe_(19)(50nm)/ Fe(T nm)多层膜,以及微结构,饱和磁化,矫顽力,铁磁共振(FMR )详细讨论宽度和垂直的旋转波(PSSW)模式。随着Fe膜厚度的增加,多层膜的饱和磁化量从10,547增加到14,494g,变得更接近理论值,并且铁磁共振线宽显示了整体趋势。值得注意的是,当Fe厚度达到4nm时,通过FMR光谱中的PSSW模式的外观已经找到了强的钉效效果。随着Fe膜的厚度从4到15nm增加,垂直静态旋转波场(H_P)从133到379 OE增加,并且垂直静态旋转波线宽(ΔH_P)从68增加到148个OE。值得注意的是,对于8nm厚的Fe膜,多层薄膜实现了具有高饱和磁化强度(4πm,13,525gs),低面内铁磁谐振场(H_R,725 OE)和低FMR线宽(ΔH)的良好综合性能84.24 OE)。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2020年第4期|166399.1-166399.6|共6页
  • 作者单位

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

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