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首页> 外文期刊>Journal of magnetism and magnetic materials >Modulation of PSSW resonance field affected by exchange stiffness A in Fe/NiFe/Fe multi-layer films with different Fe film thicknesses
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Modulation of PSSW resonance field affected by exchange stiffness A in Fe/NiFe/Fe multi-layer films with different Fe film thicknesses

机译:用不同的Fe膜厚度的Fe / NiFe / Fe多层膜影响PSSW谐振场的调制

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摘要

Microwave devices, designed by the electromagnetic characteristics of spin waves, are widely used in radio frequency circuits and microwave systems, such as magnetic tunable filters, frequency multiplier, and signal-to-noise ratio enhancers. In order to manufacture these devices, it is not only the saturation magnetization (4πM_s) and ferromagnetic resonance linewidth (ΔH) that need to be regulated, but also the exchange stiffness (A). In this study, the Fe (t nm)/Ni_(81)Fe_(19) (50 nm)/Fe (t nm) multilayer films were proposed to regulate the 4πM_s, ΔH, and A, which were fabricated using electron beam evaporation, and the dynamic magnetic properties of the film were studied by ferromagnetic resonance (FMR) spectroscopy. Firstly, we obtain the 4πM_s, γ and H_a by fitting the uniform FMR mode. Then we obtain the exchange stiffness by fitting the first (p = 1) perpendicular standing spin wave (PSSW) mode. With the increasing Fe film thickness, the calculated saturation magnetization increased from 9250 to 14060Gs, FMR linewidth increased from 111.5 to 140.3Oe and the exchange stiffness decreased from 22.1 × 10~(-12) to 7.8 × 10~(-12)J/m.
机译:由旋转波的电磁特性设计的微波器件广泛用于射频电路和微波系统,例如磁性可调滤波器,频率倍增器和信噪比增强器。为了制造这些装置,它不仅是需要调节的饱和磁化强度(4πm_s)和铁磁共振线宽(Δh),而且是交换刚度(a)。在该研究中,提出了Fe(T nm)/ Ni_(81)Fe_(19)(50nm)/ Fe(T nm)多层膜调节使用电子束蒸发制造的4πm_s,Δh和a,这是由电子束蒸发制造的通过铁磁共振(FMR)光谱研究薄膜的动态磁性。首先,我们通过拟合均匀的FMR模式获得4πM_S,γ和H_A。然后,我们通过拟合第一(P = 1)垂直的旋转波(PSSW)模式来获得交换刚度。随着Fe膜厚度的增加,计算的饱和磁化强度从9250增加到14060g,FMR线宽从111.5增加到140.3o,并且交换刚度从22.1×10〜(-12)降低到7.8×10〜(-12)j / m。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2020年第11期|167222.1-167222.5|共5页
  • 作者单位

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China;

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