Low-temperature Spin Spray Deposited Ferrite/piezoelectric Thin Film Magnetoelectric Heterostructures with Strong Magnetoelectric Coupling.

摘要

We report low-temperature spin spray deposited Fe3O4/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature ([600 C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O4/ZnO ME heterostructures have much lower deposition temperature (less than 100 C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.