机译:通过添加SiO_2制备具有[0 01]晶体生长的L1_0 FePt薄膜:薄膜的快速热退火和点图案化
Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
Venture Business Laboratory, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
Venture Business Laboratory, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
Research Institute of Advanced Technology, Akita Prefectural R&D Center, 4-21 Sanuki, Akita 010-1623, Japan;
Research Institute of Advanced Technology, Akita Prefectural R&D Center, 4-21 Sanuki, Akita 010-1623, Japan;
Research Institute of Advanced Technology, Akita Prefectural R&D Center, 4-21 Sanuki, Akita 010-1623, Japan;
FePt; L1_0 ordering; rapid thermal annealing; RTA; oxide addition; SiO_2; ZnO;
机译:通过添加ZnO和快速热退火制备具有001晶体生长的L10 FePt薄膜
机译:SiO_2添加和快速热退火在L1_0级FePt薄膜中的[001]取向非外延生长。
机译:快速热退火法制备L1_0 FePt纳米颗粒复合薄膜
机译:Cu掺杂效果对通过快速热退火在Tbfeco / Fept CGC膜中的SiO_2基板和壁结构上的快速热退火制备的谷粒
机译:使用脉冲阴极电弧沉积和快速热退火制备C54钛硅化物薄膜。
机译:快速热退火用于射频磁控溅射沉积的高质量ITO薄膜
机译:FePt和FePt / Cu薄膜的快速热退火