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Cu doping effect on FePt grains prepared by rapid thermal annealing on SiO_2 substrate and wall structure in TbFeCo/FePt CGC-like film

机译:Cu掺杂效果对通过快速热退火在Tbfeco / Fept CGC膜中的SiO_2基板和壁结构上的快速热退火制备的谷粒

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We report that Cu substitution is effective in raising the degree of (001) crystal orientation of FePt grains prepared by rapid thermal annealing on SiO_2. We fabricated coupled granular and continuous (CGC) like films such as TbFeCo on FePt grains. The wall coercivity was about twice that of the TbFeCo single layer film. From three-dimensional micromagnetic simulations with Landau-Lifshitz-Gilbert (LLG) equation, it was confirmed that wall coercivity was enhanced and domain shapes made smooth in CGC film. When the thickness of the TbFeCo layer was thin, wall width was thinner than the theoretical value.
机译:我们认为Cu替代是有效地提高通过在SiO_2上快速热退火制备的备用颗粒的(001)晶体取向的程度。我们制造了耦合的粒状和连续(CGC),如薄膜,如TBFECO。壁矫顽力约为TBFeco单层膜的两倍。从具有Landau-Lifshitz-Gilbert(LLG)方程的三维微磁模拟,证实了壁矫顽力,增强了CGC膜中的畴形状。当TBFeco层的厚度薄时,壁宽度比理论值薄。

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