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L10 FePt thin films with 001 crystalline growth fabricated by ZnO addition and rapid thermal annealing

机译:通过添加ZnO和快速热退火制备具有001晶体生长的L10 FePt薄膜

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摘要

FePt films with a high degree of order S of the Ll0 structure (S > 0.90) and well defined [001] crystalline growth perpendicular to the film plane are fabricated on thermally oxidized Si substrates by the addition of ZnO and a successive rapid thermal annealing (RTA) process.The optimum condition to prepare high-ordering L10 FePtZnO films is 20 vol% ZnO addition and 450 ℃ annealing.The effect of the ZnO additive on the ordering process of the L10 FePtZnO films is discussed.In the annealing process,Zn atoms move to the film surface and evaporate.The motion of the Zn atoms accelerates the intergrain exchange and decreases the ordering temperature.
机译:通过添加ZnO和连续的快速热退火工艺,在热氧化的Si衬底上制备具有高L10级结构S(S> 0.90)且垂直于膜平面的清晰定义的[001]晶体生长的FePt膜(制备高阶L10 FePtZnO薄膜的最佳条件是添加20 vol%的ZnO和450℃退火。讨论了ZnO添加剂对L10 FePtZnO薄膜的有序化的影响。在退火过程中,Zn原子移动到薄膜表面并蒸发.Zn原子的运动加快了晶粒间的交换并降低了有序温度。

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  • 来源
    《中国物理:英文版》 |2013年第8期|627-631|共5页
  • 作者

    Liu Xi; Ishio Shunji;

  • 作者单位

    Key Laboratory of Ministry of Education for Opto-Electronic Technology and Intelligent Control,Lanzhou Jiaotong University, Lanzhou 730070, China;

    Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;

    Venture Business Laboratory, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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