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首页> 外文期刊>Journal of the European Ceramic Society >Fabrication of Low-Voltage ZnO Varistors by a Two-Step Process
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Fabrication of Low-Voltage ZnO Varistors by a Two-Step Process

机译:两步法制备低压ZnO压敏电阻

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摘要

In order to make a low-voltage ZnO varistor of uniformly large-grained microstructure, a pure ZnO powder compact was first sintered at 1500℃. The abnormal grain growth that occurred during the sintering of the ZnO resulted in a relatively uniform matrix of very large grains. Subsequent heat-treatment in contact with a Bi_2O_3 powder mixture resulted in the formation of a low-voltage ZnO varistor.
机译:为了制造具有均匀大晶粒组织的低压ZnO压敏电阻,首先在1500℃下烧结纯ZnO粉末压块。在ZnO烧结过程中发生的异常晶粒长大导致非常大晶粒的相对均匀的基体。随后与Bi_2O_3粉末混合物接触的热处理导致形成低压ZnO压敏电阻。

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