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Degradation characteristics of low-voltage ZnO varistor manufactured by chemical coprecipitation processing

机译:化学共沉淀法制备的低压ZnO压敏电阻的降解特性

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摘要

The chemical coprecipitation processing has been developed to manufacture low-voltage ZnO varistor. The emphasis of the process is mainly on improving the stability against AC degradation stress and pulse degradation so as to obtain high quality component. It was found that the higher electrical field (E{sub}b = 87.5 V/mm) and nonlinear coefficient (a = 32.5) can be obtained on the sintered sample prepared with this method compared with sample of identical overall composition prepared by conventional ceramic processing route. The improvement in electrical properties may be explained by the homogeneous distribution of various dopant in the mixed powder and the chemically more uniform structures.
机译:已经开发了化学共沉淀工艺来制造低压ZnO压敏电阻。该过程的重点主要在于提高抗交流降解应力和脉冲降解的稳定性,以获得高质量的组件。发现与用常规陶瓷制备的整体成分相同的样品相比,用这种方法制备的烧结样品可以获得更高的电场(E {sub} b = 87.5 V / mm)和非线性系数(a = 32.5)。处理路线。可以通过混合粉末中各种掺杂剂的均匀分布和化学上更均匀的结构来解释电性能的改善。

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