首页> 外文期刊>Journal of Engineering for Gas Turbines and Power >Evaluation of the Phase Composition, Crystallinity, and Trace Isotope Variation of SiC in Experimental TRISO Coated Particles
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Evaluation of the Phase Composition, Crystallinity, and Trace Isotope Variation of SiC in Experimental TRISO Coated Particles

机译:实验性TRISO涂层颗粒中SiC的相组成,结晶度和微量同位素变化的评估

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The SiC layers in experimental tristructural-isotropic (TRISO) coated particles with zir-conia kernels were evaluated for their phase composition, impurity levels, crystal perfection, and twinning of the crystallites in the layers. This evaluation was necessary to compare the different SiC layers and relate these properties to various quality tests and ultimately to manufacturing parameters in the chemical vapor deposition (CVD) coater. Identification of the various polytypes was done using electron diffraction methods. This is the only method for the unequivocal identification of the different polytypes. The 3C and 6H polytypes were positively identified. The SiC in some samples is disordered. This is characterized by planar defects, of different widths and periodicities, giving rise to streaking in the diffraction pattern along the [111] direction of the 3C polytype. Polarized light microscopy in transmission easily distinguishes between the cubic (beta) and non-cubic (alpha) SiC in the layers and provides valuable information about the distribution of these phases in the layers. Raman spectroscopy was used to examine the distribution of Si in the SiC layers of the different samples. Two samples contain elevated levels of Si (~50%), with the highest levels on the inside of the layers. The elevated Si levels also occur in most of the other samples, albeit at lower Si levels. This was also confirmed by the use of scanning electron microscope (SEM) electron backscatter analysis. Rietveld analysis using X-ray diffraction is presently the only reliable method to quantify the polytypes in the SiC layer. It was found thai the SiC layer consists predominantly (82-94%) of the 3C polytype, with minor amounts of the 6H and 8H polytypes. Impurities in the SiC and PyC could be measured with sufficient sensitivity using laser ablation inductively coupled mass spectrometry (LA-ICP-MS). The SiC and PyC layers are easily located from the intensity of the C~(13) and Si~(29) signals. In most cases the absolute values are less important than the variation of impurities in the samples. Elevated levels of the transition elements Cu, Ni, Co, Cr, and Zn are present erratically in some samples. These elements, together with Ag~(107) and Ag~(109), correlate positively, indicating impurities, even metallic particles. Elevated levels of these transition elements are also present at the SiC/outer pyrolytic carbon (OPyC) interface. The reasons for this are unknown at this stage. NIST standards were used to calibrate the impurity levels in the coated particles. These average from 1 ppm to 18 ppm for some isotopes.
机译:评价了具有锆石核的试验性三方各向同性(TRISO)涂层颗粒中的SiC层的相组成,杂质含量,晶体完善度以及层中微晶的孪晶。该评估对于比较不同的SiC层并使这些特性与各种质量测试以及最终与化学气相沉积(CVD)涂层机中的制造参数相关是必要的。各种多型的鉴定是使用电子衍射法完成的。这是唯一确定不同多型的唯一方法。积极鉴定了3C和6H多型。一些样品中的SiC是无序的。其特征是具有不同宽度和周期性的平面缺陷,导致沿3C多型体的[111]方向在衍射图中出现条纹。透射中的偏振光显微镜可以轻松地区分层中的立方SiC和非立方SiC,并提供有关这些相在层中分布的有价值的信息。拉曼光谱法用于检查不同样品的SiC层中Si的分布。两个样品中的Si含量较高(约50%),并且在样品层的内部含量最高。尽管其他硅样品含量较低,但大多数其他样品中的硅含量也会升高。使用扫描电子显微镜(SEM)电子反向散射分析也证实了这一点。目前,使用X射线衍射法进行Rietveld分析是量化SiC层中多晶型的唯一可靠方法。发现SiC层主要由3C多型构成(82-94%),而具有少量的6H和8H多型。 SiC和PyC中的杂质可以使用激光烧蚀电感耦合质谱(LA-ICP-MS)以足够的灵敏度进行测量。从C〜(13)和Si〜(29)信号的强度可以轻松定位SiC和PyC层。在大多数情况下,绝对值不如样品中杂质的变化重要。在某些样品中,过渡元素Cu,Ni,Co,Cr和Zn的含量不稳定。这些元素与Ag_(107)和Ag_(109)呈正相关,表示杂质,甚至是金属颗粒。在SiC /外部热解碳(OPyC)界面处也存在这些过渡元素的水平升高。目前尚不清楚其原因。 NIST标准品用于校准涂层颗粒中的杂质含量。对于某些同位素,这些平均值从1 ppm到18 ppm。

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