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机译:快速热退火稀氮化镓GaInNAs光电探测器的改进光电性能
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK;
Advanced Technology Institute, Faculty of Engineering &amp Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK;
Advanced Technology Institute, Faculty of Engineering &amp Physical S;
Photodetector; dilute nitride; GaInNAs; annealing; defects; dark current; quantum efficiency;
机译:快速热退火稀氮化镓GaInNAs光电探测器的改进光电性能
机译:快速热退火对低损耗1.3μmGaInNAs / GaAs可饱和布拉格反射器的光学性能的影响
机译:通过快速热退火在稀释的氮化物QW上生长的GaAs层进行图案化
机译:快速热退火对掺有氮化物(GaAsN)的InAs / GaAs量子点的影响,所述量子点的光发射超过〜1.5μm
机译:快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
机译:从CsPbBr3纳米油墨到热退火烧结CsPbBr3–CsPb2Br5薄膜:对光电子性质的影响
机译:快速热退火稀氮化镓GaInNAs光电探测器的改进光电性能