机译:3D集成电路堆叠硅片中的硅通孔和键合层的电气和机械性能
Department of Materials Science &amp Engineering, Seoul National University, Seoul, Korea;
Department of Materials Science &amp Engineering, Seoul National University, Seoul, Korea;
Department of Materials Science &amp Engineering, Seoul National University, Seoul, Korea;
Department of Materials Science &amp Engineering, Seoul National University, Seoul, Korea;
Through-silicon via; 3D integrated circuits; thermal stress; keep-away zone; finite-element analysis;
机译:3D集成电路堆叠硅片中的硅通孔和键合层的电气和机械性能
机译:在塑料封装过程中,通过硅通孔的3D集成电路封装中芯片堆叠效应的流固耦合分析
机译:用于三维堆叠集成电路(3D-SIC)架构的铜硅通孔(TSV)的工艺评估和附着力评估
机译:纳米微观铜通过3D堆叠集成电路硅通孔的电学特性
机译:对3D集成电路中通过硅通孔的热应力和可靠性的缩放和微观结构效应
机译:三维集成电路(3D IC)关键技术:硅通孔(TSV)
机译:晶片级精细间距Cu-Cu键合3-D堆叠集成电路
机译:采用通孔晶片过孔和凸块键合的集成光学mEms