Growth of ZnO films by MOVPE using diisopropylzinc and alcohols

摘要

ZnO films have been grown on a-plane sapphire substrates by metalorganic vapor-phase epitaxy using diisopropylzinc as a zinc source and iso-propanol or tertiary-butanol as oxygen sources. The growth temperature and pressure were 300-500℃ and 76 Torr, respectively. The samples were characterized by photoluminescence, Hall-effect measurements, X-ray diffraction and Raman spectroscopy. When tertiary butanol was used as the oxygen source under high Ⅵ/Ⅱ conditions, distinctive peaks were observed at 3.29eV and 1550 cm~(-1) in the photoluminescence and Raman spectra, respectively.