Growth of nitrogen-doped ZnO films by MOVPE using diisopropylzinc and tertiary-butanol

摘要

Nitrogen-doped ZnO films have been grown by metalorganic vapor-phase epitaxy using diisopropylzinc, tertiary-butanol in the growth temperature range of 300-450℃. Tertiary-butylamine was used as a nitrogen-dopant source. The nitrogen incorporation and N-H vibrational mode were observed by Raman spectroscopy. The electric properties of the as-grown samples showed n-type with carrier concentration of the order of 10~(18)cm~(-3). The N-H vibrational mode was eliminated and high electron concentration was decreased to the order of 10~(15)cm~(-3) by post-annealing at 500℃.