Growth Of Ga-doped Zno By Movpe Using Diisopropylzinc And Tertiary Butanol

摘要

Gallium-doped ZnO thin films were grown on quartz substrates by metalorganic vapor phase epitaxy using diisopropylzinc (Di-PrZn) as a zinc source and tertiary butanol (t-BuOH) as an oxygen source. Triethylgallium (TEG) was used as a gallium source. A vertical-type reactor with a high-speed rotating disk and a conventional horizontal-type reactor were used in these experiments. The growth temperature was 350 ℃, and the growth pressure was 76Torr. The range of Ga flow ratios [TEG]/ ([TEG]+[Di-PrZn]) was between 0% and 11%. The thin film properties were evaluated by Raman scattering, X-ray diffraction, Hall effect and transmittance measurements. The thin films grown by using these source materials exhibited a low resistivity up to 2.21 × 10~(-4)Ω cm, and a high optical transparency over 80%.