Characteristics of metal-ferroelectric-insulator-semiconductor structure using a Nd-doped Bi_4Ti_3O_(12) ferroelectric layer

摘要

The metal-ferroelectric-insulator-semiconductor (MFIS) structure has been fabricated using Bi_(3.54)Nd_(0.46)Ti_3O_(12) (BNdT) as a ferroelectric layer. The BNdT films can crystallize well at 700℃ for 1 h. The J-V curve shows the MFIS structure has a good insulating property. C-V hysteresis loops at various sweeping speed were collected as were polarization types. The leakage current density, dielectric constant and dielectric loss were found to be dependent on the annealing temperature. The dielectric constant and dielectric loss at a frequency of 100 kHz are 98 and 0.092, respectively.