Study on Ferroelectric Properties of Nd-Doped Bi_4Ti_3O_(12) Thin Films Prepared by Sol-Gel Method

摘要

Nd-doped bismuth titanate Bi_(4-x)Nd_xTi_3O_(12) (BNT) thin films were fabricated on Pt/Ti/SiO_2/Si substrates by sol-gel method and spin-coating technique. The structures and the ferroelectric properties of the films were investigated. Nd doping leads to a marked improvement in the remanent polarization (P_R) and the coercive field (E_c). At the applied electric field of 260 kV/cm, P_R and E_C of the BNT film with x=0.5 annealed at 650 deg C are 19 mu C/cm~2 and 135 kV/cm, respectively. Moreover, the BNT film with x=0.5 showed a fatiguefree behavior up to 3 X 10~(10) read/write cycles.