首页> 外文期刊>Journal of Crystal Growth >Physical properties of Ag-doped cadmium telluride thin films fabricated by closed-space sublimation technique
【24h】

Physical properties of Ag-doped cadmium telluride thin films fabricated by closed-space sublimation technique

机译:闭空间升华技术制备的掺银碲化镉薄膜的物理性能

获取原文
获取原文并翻译 | 示例
       

摘要

Cadmium telluride (CdTe) thin films were prepared by the closed-space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass. In the next step, the annealed films at 450 degrees C for 30 min were dipped in AgNO3-H2O solution at room temperature. These films were again annealed at 450 degrees C for I h to obtain silver-doped samples. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrically i.e. DC electrical resistivity as well as photo resistivity by van der Pauw method at room temperature, dark conductivity, activation energy analysis as a function of temperature by two-probe method under vacuum, and spectrophotometry. The electron microprobe analyzer (EMPA) results showed an increase of Ag content composition in the samples by increasing the immersion time of films in solution. The Hall measurements indicated the increase in mobility and carrier concentrations of CdTe films by doping of Ag. A significant change in the shape and size of the CdTe grains were observed. (c) 2006 Elsevier B.V. All rights reserved.
机译:碲化镉(CdTe)薄膜是通过封闭空间升华(CSS)技术制备的,使用CdTe粉末作为蒸发剂在水白玻璃基板上。在下一步中,将在450摄氏度下退火30分钟的薄膜在室温下浸入AgNO3-H2O溶液中。将这些膜再次在450℃下退火1小时以获得掺杂银的样品。通过X射线衍射(XRD),扫描电子显微镜(SEM),室温下的电即直流电阻率和范德堡方法的光电阻率,暗电导率,活化能分析随温度的变化对样品进行表征在真空下用两探针法测定,并用分光光度法测定。电子探针分析仪(EMPA)的结果表明,通过增加薄膜在溶液中的浸没时间,可以增加样品中Ag的含量。霍尔测量表明,通过掺杂Ag,CdTe薄膜的迁移率和载流子浓度增加。观察到CdTe晶粒的形状和尺寸发生了显着变化。 (c)2006 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号