Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer

摘要

A layer (209) including modified cadmium telluride and unmodified cadmium telluride disposed within the cadmium telluride layer. The modified area (513) includes a concentration of telluride that is greater than the concentration of telluride in the unmodified cadmium telluride area. The modified area (513) also includes a hexagonal close packed crystal structure. A method for modifying a cadmium telluride layer and a thin film device are also disclosed.