MODIFIED CADMIUM TELLURIDE LAYER, A METHOD OF MODIFYING A CADMIUM TELLURIDE LAYER, AND A THIN FILM DEVICE HAVING A CADMIUM TELLURIDE LAYER

摘要

A layer including modified cadmium telluride and unmodified cadmium telluride disposed within the cadmium telluride layer. The modified area includes a concentration of telluride that is greater than the concentration of telluride in the unmodified cadmium telluride area. The modified area also includes a hexagonal close packed crystal structure. A method for modifying a cadmium telluride layer and a thin film device are also disclosed.