机译:掺杂Ga和(Ga,Co)掺杂的ZnO薄膜的结构,光学和电学性质
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China Department of Physics, The University of Warwick, Coventry, CV4 7AL, United Kingdom;
rnShanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
rnShanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
rnShanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
rnDepartment of Physics, The University of Warwick, Coventry, CV4 7AL, United Kingdom;
A3. (Ga, Co)-codoped ZnO; A3. Physical vapor deposition; B1. Transparent conductive oxide; B2. Diluted magnetic semiconductors; B2. Electrical and optical properties;
机译:Ga掺杂的ZnO和Ga,B掺杂的ZnO薄膜的结构和电学性质:附加硼杂质的影响
机译:镓浓度对溶胶凝胶法生长的掺镓ZnO薄膜结构,电学和光学性质的影响
机译:激光脉冲能量对脉冲激光沉积Ga掺杂ZnO薄膜的结构,光学和电学性质的影响
机译:热退火对掺杂Ga的ZnO薄膜电学,光学和结构性能的影响
机译:GaN,ZnO和(GaN)1-x(ZnO)x的结构,电子和光学性质的第一性原理研究。
机译:射频溅射制备Ga掺杂ZnO薄膜的光电性能和电稳定性
机译:退火对Er,Li-Codoped ZnO薄膜的结构,电学和光学性质的影响