PURPOSE: GaN LEDs using Ga-doped ZnO films as electrodes and a manufacturing method thereof are provided to improve electric conductance and the durability for plasma by improving the transmittance of visible ray and infrared ray. CONSTITUTION: A GaN p-n epi layer is formed on a sapphire substrate(10) by using a metal organic chemical vapor deposition. The thickness of the GaN p-n epi layer is about 3m~5m. A p-GaN layer pattern(14-1) is formed by etching a part of the p-GaN epi layer. A GZO thin film(16) is deposed on the p-GnN layer and an n-GaN layer by using a shadow mask.
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机译：目的：提供一种使用Ga掺杂的ZnO膜作为电极的GaN LED及其制造方法，以通过改善可见光和红外线的透射率来改善电导率和等离子体的耐久性。组成：在蓝宝石衬底（10）上使用金属有机化学气相沉积法形成了GaN p-n外延层。 GaN p-n外延层的厚度约为3m〜5m。通过蚀刻p-GaN外延层的一部分来形成p-GaN层图案（14-1）。通过使用荫罩在p-GnN层和n-GaN层上沉积GZO薄膜（16）。
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