机译:Al预沉积对在Si(111)衬底上生长的AlN缓冲层和GaN层性能的影响
Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;
rnInstitute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;
rnInstitute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;
rnInstitute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;
rnInstitute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;
rnInstitute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;
rnInstitute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;
rnInstitute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;
A1. Atomic force microscopy; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
机译:AlN缓冲层厚度对AlGaN夹层在Si(111)衬底上生长的GaN外延层结构性能的影响
机译:具有AlN / AlGaN缓冲层的Si(111)基板上三维生长的GaN岛中的螺纹位错减少
机译:HT Al-Preeseding和HT ALN缓冲层对Si(111)基板上生长的GaN结构和光学性质的影响
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:使用双AlN缓冲层在m面蓝宝石上生长的半极性(11-22)GaN的各向异性结构和光学性质
机译:高级缓冲层对(111)硅衬底上生长的InGaN / GaN mQW光学性质的影响