机译:扫描隧道显微镜研究Ga辅助氧化物在GaAs(001)上的解吸
The University of Sheffield, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield S1 3JD, United Kingdom;
The University of Sheffield, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield S1 3JD, United Kingdom;
The University of Sheffield, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield S1 3JD, United Kingdom;
The University of Sheffield, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield S1 3JD, United Kingdom;
The University of Sheffield, Department of Physics, Hicks Building, Hounsfield Road, Sheffield S3 7RH, United Kingdom;
A1. Scanning tunnelling microscopy; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting gallium arsenide;
机译:超高真空扫描隧道显微镜研究在保护性As层解吸后GaAs(001)表面上脱盖的InAs量子点
机译:原位变温扫描隧道显微镜研究MnAs / GaAs(001)的相变和表面形貌
机译:扫描隧道显微镜研究GAAS(001)-2X3表面
机译:通过扫描隧道显微镜研究InP(001)表面上的GaAs异质外延
机译:铁(001)/氧化镁(001)/铁(001)隧穿磁阻结构的原子能级表征和自旋极化扫描隧道显微镜。
机译:生长期间使用扫描隧道显微镜尖端对InAs / GaAs(001)量子点进行温度依赖的现场控制
机译:硒化GaAs(001)-2×3表面的扫描隧道显微镜研究
机译:用扫描隧道显微镜研究Fe在Gaas(001) - (2x4)上的成核和生长;杂志文章