Gas source MBE grown Al_(0.52)In_(0.48)P photovoltaic detector;

摘要

Al_(0.52)In_(0.48)P photovoltaic detector has been fabricated using gas source molecular beam epitaxy and its characteristics have been measured in detail. The Al_(0.52)In_(0.48)P absorption layer shows a mismatch of +4.76 x 10~(-4) to the GaAs substrate with a full width at half maximum of 22.5 arcsec. The dark current is only 0.78 pA at reverse bias of 500 mV and the R_0A is about 1.7 x 10~8 Ωcm2 at room temperature. The measured peak responsivity at zero bias is 0.287 A/W at 470 nm with 50% cut-on and cut-off wavelengths at 440 and 495 nm, respectively.