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首页> 外文期刊>Semiconductor science and technology >Energy relaxation studies in In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As two-dimensional electron gases and quantum wires
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Energy relaxation studies in In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As two-dimensional electron gases and quantum wires

机译:In_(0.52)Al_(0.48)As / In_(0.53)Ga_(0.47)As / In_(0.52)Al_(0.48)As二维电子气和量子线的能量弛豫研究

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摘要

We present Joule heating measurements carried out over a wide temperature range on two-dimensional electron gases (2DEGs) and quantum wires of varying widths fabricated in an In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As heterostructure system that has a 25 nm wide In_(0.53)Ga_(0.47)As quantum well region. The power dissipated per electron is extracted and the electron―phonon coupling processes in these systems are studied. The temperature decay of the power loss at the 2DEG points towards unscreened piezoelectric coupling to the acoustic modes over temperatures of 1―30 K, with boundary scattering in the ohmic contacts gaining importance at very low temperatures. In the wires, we observe different behaviour and the effect of wire width and carrier density on the observed energy-loss rates. Possible phonon confinement and exponential suppression in these structures are also looked at.
机译:我们介绍了在In_(0.52)Al_(0.48)As / In_(0.53)Ga_(0.47)As /中制造的二维电子气(2DEG)和宽度可变的量子线的宽温度范围内进行的焦耳热测量In_(0.52)Al_(0.48)As异质结构系统,具有25 nm宽的In_(0.53)Ga_(0.47)As量子阱区。提取了每个电子的耗散功率,并研究了这些系统中的电子-声子耦合过程。 2DEG处功率损耗的温度衰减表明在1至30 K的温度下未屏蔽的压电耦合到声模,在非常低的温度下欧姆接触中的边界散射变得越来越重要。在导线中,我们观察到不同的行为以及导线宽度和载流子密度对所观察到的能量损耗率的影响。还研究了这些结构中可能的声子限制和指数抑制。

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