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Epitaxial growth of orthorhombic SnO_2 films on various YSZ substrates by plasma enhanced atomic layer deposition

机译:通过等离子体增强原子层沉积在各种YSZ衬底上外延生长正交晶SnO_2膜

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摘要

SnO_2 thin films were deposited on (100), (110), and (111) yttria-stabilized zirconia (YSZ) substrates using plasma enhanced atomic layer deposition (PEALD), and their structural, electrical, and optical properties were investigated. X-ray diffraction, X-ray pole figure, and high resolution TEM analyses revealed that orthorhombic (100) and (110) SnO_2 films were hetero-epitaxially grown on (100) and (110) YSZ, respectively. The determined in-plane orientation relationships were [010]_(C-SnO_2) ||[010]_(YSZ) and [001]_(C-SnO_2)||[001]_(YSZ) ((100)YSZ) and [110]_(C-SnO_2)||[110]_(YSZ) and [001]_(C-SnO_2)||[001]_(YSZ) ((110)YSZ). However, polycrystalline rutile SnO_2 films were deposited on the (111) YSZ substrate. All the SnO_2 films exhibited a similar electrical resistivity of ~2 × 10~(-2) Ω cm and the average transmittance of 78% in the visible range and thus the electrical and optical properties were not noticeably changed with film orientation and phase.
机译:使用等离子体增强原子层沉积(PEALD)在(100),(110)和(111)氧化钇稳定的氧化锆(YSZ)衬底上沉积SnO_2薄膜,并研究了它们的结构,电学和光学性质。 X射线衍射,X射线极图和高分辨率TEM分析表明,正交(100)和(110)SnO_2薄膜分别在(100)和(110)YSZ上异质外延生长。所确定的面内取向关系为[010] _(C-SnO_2)|| [010] _(YSZ)和[001] _(C-SnO_2)|| [001] _(YSZ)((100)YSZ )和[110] _(C-SnO_2)|| [110] _(YSZ)和[001] _(C-SnO_2)|| [001] _(YSZ)((110)YSZ)。但是,多晶金红石SnO_2膜沉积在(111)YSZ衬底上。所有SnO_2薄膜在可见光范围内的电阻率均为〜2×10〜(-2)Ωcm,平均透射率为78%,因此其电学和光学性能不会随膜的取向和相的变化而明显变化。

著录项

  • 来源
    《Journal of Crystal Growth》 |2012年第1期|15-19|共5页
  • 作者单位

    Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea;

    Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea;

    Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Crystal structure; A3. Atomic layer deposition; B1. Tin oxide; B1. Yttria-stabilized zirconia;

    机译:A1。晶体结构A3。原子层沉积;B1。氧化锡B1。氧化钇稳定的氧化锆;

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