机译:蓝宝石衬底上SiC的CVD生长和外延SiC形成的石墨烯
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA;
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA;
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA;
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA;
A1. X-ray diffraction; A1. Raman spectroscopy; A3. Chemical vapor deposition processes; B1. Carbides; B1. Graphene; B1. Nitrides;
机译:LPCVD法控制C面蓝宝石衬底上3C-SiC和6H-SiC膜的生长和表征
机译:Ge在SiC衬底上通过CVD辅助SiC外延生长
机译:使用CVD生长的3C-SiC种子层通过VLS传输在硅衬底上外延生长3C-SiC
机译:CVD在SiC衬底上辅助SiC外延生长
机译:通过RTCVD在SOI衬底上生长SiC薄膜。
机译:化学气相沉积(CVD)中C面SiC和蓝宝石上的石墨碳外延生长
机译:化学气相沉积(CVD)中C面SiC和蓝宝石上的石墨碳外延生长