Structural properties of Si and Mg doped and undoped Al_0.13Ga_0.87N Layers grown by metalorganic chemical vapor deposition

摘要

Structural properties of Si and Mg doped and undoped Al_0.13Ga_0.87N layers grown on sapphire substrates by metalorganic chemical vapor deposition were studied using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. For both low SiH_4 and low Cp_2Mg flow rates, the full width at half maximum values of rocking curve and total threading dislocation density in Al_0.13Ga_0.87N layers rapidly decrease due to the increased island size by surfactant effect.*