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NO gas sensor based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition

机译:金属有机化学气相沉积生长基于ZnGa2O4外延层的NO气体传感器

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摘要

A gas sensor based on a ZnGa2O4(ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO2(500 ppb), SO2 (125 ppm), CO (125 ppm), and CO2 (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications.
机译:本文研究了一种基于ZnGa2O4(ZGO)薄膜的气体传感器,该薄膜是通过在25°C至300°C的不同温度下运行的有机金属化学气相沉积法生长而成的。该传感器在300°C的温度下显示出出色的感测特性。该传感器在6.25ppm ppm的NO下暴露时的灵敏度为22.21,其响应时间为57µs。除此之外,当暴露于NO2(500 ppb),SO2(125 ppm),CO(125 ppm)和CO2(1500 ppm)时,灵敏度分别为1.18、1.27、1.06和1.00。这些结果表明ZGO气体传感器不仅灵敏度高,而且对NO气体的选择性也很高。此外,获得的结果表明ZGO传感器适用于物联网(IOT)应用。

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